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nnp:optics:internal_quantum_efficiency [2017/02/03 10:00] stefan.birner [Input file structure] |
nnp:optics:internal_quantum_efficiency [2017/02/03 10:19] (current) stefan.birner [Recombination] |
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==== Bandstructure ==== | ==== Bandstructure ==== | ||
- | The band structure of the **MQW** structure can be seen of figure {{ref>bandstructure}} without bias voltage. | + | The band structure of the **MQW** structure can be seen in figure {{ref>bandstructure}} without bias voltage. |
<figure bandstructure> | <figure bandstructure> | ||
;#; | ;#; | ||
- | <dataplot center linepoints xrange=-100.0:180.0 yrange=-3.0:2.0 xlabel="x(nm)" ylabel="E(eV)" ylegends="Gamma LH HH SO Fermi_{electron} Fermi_{hole}" legendpos="right bottom" 600x400> | + | <dataplot center linepoints xrange=-100.0:180.0 yrange=-3.0:2.0 xlabel="Position (nm)" ylabel="Energy (eV)" ylegends="Gamma LH HH SO Fermi_{electron} Fermi_{hole}" legendpos="right bottom" 600x400> |
-121 -0 -0 -0 -0 0 0 | -121 -0 -0 -0 -0 0 0 | ||
-120.001 -0 -0 -0 -0 0 0 | -120.001 -0 -0 -0 -0 0 0 | ||
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</dataplot> | </dataplot> | ||
;#; | ;#; | ||
- | <caption>Bandstructure with zero bias. Two Quantum wells with alloy structures //In(0.7)Ga(0.3)As//, and well barriers //In(0.53)Ga(0.47)As// </caption> | + | <caption>Band structure at zero bias. The two quantum wells consist of ${\rm In}_{0.7}{\rm Ga}_{0.3}{\rm As}$ and are surrounded by ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ barriers.</caption> |
</figure> | </figure> | ||
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<figure recombination> | <figure recombination> | ||
;#; | ;#; | ||
- | <dataplot center linepoints xrange=-50.0:150.0 xlabel="x(nm)" ylabel="I(1/cm^3/s)" ylegends="total SRH Auger radiative" legendpos="right top" 600x400> | + | <dataplot center linepoints xrange=-50.0:150.0 xlabel="Position (nm)" ylabel="R (1/cm^3/s)" ylegends="total SRH Auger radiative" legendpos="right top" 600x400> |
-121 0 0 0 0 | -121 0 0 0 0 | ||
-120 1249.9986884573 1249.9986884573 0 0 | -120 1249.9986884573 1249.9986884573 0 0 | ||
Line 5209: | Line 5209: | ||
</dataplot> | </dataplot> | ||
;#; | ;#; | ||
- | <caption>Comparison of different recombination processes</caption> | + | <caption>Comparison of different recombination processes. The applied bias is 1 V.</caption> |
</figure> | </figure> | ||
- | ==== UI Characteristics==== | + | ==== Current-Voltage Characteristics==== |
- | The $I-U$ characteristics of the device is plotted in figure {{ref>IUchar}}, where additionally the full photo-current is plotted. | + | The $I-V$ characteristics of the device is plotted in figure {{ref>IUchar}}. |
+ | This figure also includes the full photo current. | ||
<figure IUchar> | <figure IUchar> | ||
;#; | ;#; | ||
- | <dataplot center linepoints xlabel="U_{bias}(V)" ylabel="I(A/cm^2)" ylegends="I_{Right} I_{Left} I_{photo}" legendpos="left top" 600x400> | + | <dataplot center linepoints xlabel="Voltage (V)" ylabel="Current density (A/cm^2)" ylegends="I_{right} I_{left} I_{photo}" legendpos="left top" 600x400> |
0 0.0048007999 -0.004800798 8.5567076e-05 | 0 0.0048007999 -0.004800798 8.5567076e-05 | ||
0.1 7.8561578 -7.8561504 8.9688789e-05 | 0.1 7.8561578 -7.8561504 8.9688789e-05 | ||
Line 5235: | Line 5236: | ||
</dataplot> | </dataplot> | ||
;#; | ;#; | ||
- | <caption>$I-U$ characteristic of the device with additional photo-current. The device had just two contacts which means the charge carrier currents on the left and the right contacts are equal in absolute value.</caption> | + | <caption>$I-V$ characteristics of the device and photo current. The device has two contacts and the charge carrier current densities at the left and at the right contact are equal in absolute value.</caption> |
</figure> | </figure> | ||
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;#; | ;#; | ||
- | <dataplot center linepoints yrange=-0.005:0.8 xlabel="U_{bias}(V)" ylabel="IQE(-)" ylegends="" 600x400> | + | <dataplot center linepoints yrange=-0.005:0.8 xlabel="Voltage (V)" ylabel="IQE" ylegends="" 600x400> |
0 0.017823508 | 0 0.017823508 | ||
0.1 1.1416374e-05 | 0.1 1.1416374e-05 | ||
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</dataplot> | </dataplot> | ||
;#; | ;#; | ||
- | <caption>Internal quantum efficiency in the function of the forward bias voltage</caption> | + | <caption>Internal quantum efficiency as a function of the forward bias voltage</caption> |
</figure> | </figure> | ||