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nnp:optics:internal_quantum_efficiency [2017/02/03 10:04]
stefan.birner [Bandstructure]
nnp:optics:internal_quantum_efficiency [2017/02/03 10:19] (current)
stefan.birner [Recombination]
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 </​dataplot>​ </​dataplot>​
 ;#; ;#;
-<​caption>​Band structure at zero bias. The two quantum wells consist of ${\rm In}_{0.7}{\rm Ga}_{0.3}As$ and are separated ​by ${\rm In}_{0.53}{\rm Ga}_{0.47}As$ barriers.</​caption>​+<​caption>​Band structure at zero bias. The two quantum wells consist of ${\rm In}_{0.7}{\rm Ga}_{0.3}{\rm As}$ and are surrounded ​by ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ barriers.</​caption>​
 </​figure>​ </​figure>​
  
Line 3489: Line 3489:
 <figure recombination>​ <figure recombination>​
 ;#; ;#;
-<​dataplot center linepoints xrange=-50.0:​150.0 xlabel="​x(nm)" ylabel="​I(1/​cm^3/​s)"​ ylegends="​total SRH Auger radiative"​ legendpos="​right top" 600x400>+<​dataplot center linepoints xrange=-50.0:​150.0 xlabel="​Position ​(nm)" ylabel="​(1/​cm^3/​s)"​ ylegends="​total SRH Auger radiative"​ legendpos="​right top" 600x400>
 -121 0 0 0 0 -121 0 0 0 0
 -120 1249.9986884573 1249.9986884573 0 0 -120 1249.9986884573 1249.9986884573 0 0
Line 5209: Line 5209:
 </​dataplot>​ </​dataplot>​
 ;#; ;#;
-<​caption>​Comparison of different recombination processes</​caption>​+<​caption>​Comparison of different recombination processes. The applied bias is 1 V.</​caption>​
 </​figure>  ​ </​figure>  ​
  
  
-==== UI Characteristics====+==== Current-Voltage ​Characteristics====
  
-The $I-U$ characteristics of the device is plotted in figure {{ref>​IUchar}}, where additionally ​the full photo-current ​is plotted+The $I-V$ characteristics of the device is plotted in figure {{ref>​IUchar}}
 +This figure also includes ​the full photo current. ​
  
 <figure IUchar> <figure IUchar>
 ;#; ;#;
  
-<​dataplot center linepoints xlabel="​U_{bias}(V)" ylabel="​I(A/​cm^2)"​ ylegends="​I_{Right} I_{Left} I_{photo}"​ legendpos="​left top" 600x400>+<​dataplot center linepoints xlabel="​Voltage ​(V)" ylabel="​Current density ​(A/​cm^2)"​ ylegends="​I_{right} I_{left} I_{photo}"​ legendpos="​left top" 600x400>
 0 0.0048007999 -0.004800798 8.5567076e-05 ​ 0 0.0048007999 -0.004800798 8.5567076e-05 ​
 0.1 7.8561578 -7.8561504 8.9688789e-05 ​ 0.1 7.8561578 -7.8561504 8.9688789e-05 ​
Line 5235: Line 5236:
 </​dataplot>​ </​dataplot>​
 ;#; ;#;
-<​caption>​$I-Ucharacteristic ​of the device ​with additional ​photo-current. The device ​had just two contacts ​which means the charge carrier ​currents on the left and the right contacts ​are equal in absolute value.</​caption>​+<​caption>​$I-Vcharacteristics ​of the device ​and photo current. The device ​has two contacts ​and the charge carrier ​current densities at the left and at the right contact ​are equal in absolute value.</​caption>​
 </​figure>​ </​figure>​
  
Line 5245: Line 5246:
 ;#; ;#;
  
-<​dataplot center linepoints yrange=-0.005:​0.8 xlabel="​U_{bias}(V)" ylabel="​IQE(-)" ylegends=""​ 600x400>+<​dataplot center linepoints yrange=-0.005:​0.8 xlabel="​Voltage ​(V)" ylabel="​IQE"​ ylegends=""​ 600x400>
 0 0.017823508 ​ 0 0.017823508 ​
 0.1 1.1416374e-05 ​ 0.1 1.1416374e-05 ​
Line 5261: Line 5262:
 </​dataplot>​ </​dataplot>​
 ;#; ;#;
-<​caption>​Internal quantum efficiency ​in the function of the forward bias voltage</​caption>​+<​caption>​Internal quantum efficiency ​as a function of the forward bias voltage</​caption>​
 </​figure>​ </​figure>​
  
nnp/optics/internal_quantum_efficiency.1486116288.txt.gz · Last modified: 2017/02/03 10:04 by stefan.birner