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qcl:simulation_of_resonant_tunneling_diodes_rtds
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qcl:simulation_of_resonant_tunneling_diodes_rtds [2020/06/19 14:22] thomas.grange [Simulation of devices with open boundary conditions] |
qcl:simulation_of_resonant_tunneling_diodes_rtds [2022/03/30 17:13] (current) thomas.grange |
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| - | Note that in the current version (2020-06-18), only single band calculations are supported for such open boundary conditions. | + | Note that in the current version (2022-03-30), only single band calculations are supported for open boundary conditions. A multiband version is currently developed. |
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| The command ''<Ballistic>'' can be used to calculate ballistic transport between the contacts (i.e. no scattering process considered) if its value is set to ''yes''. | The command ''<Ballistic>'' can be used to calculate ballistic transport between the contacts (i.e. no scattering process considered) if its value is set to ''yes''. | ||
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| + | **The tutorial for AlGaAs/GaAs intraband RTD is available on our new manual from** [[https://www.nextnano.com/manual/nextnano.NEGF_tutorials/algaas_gaas_rtd.html|here]]. | ||
qcl/simulation_of_resonant_tunneling_diodes_rtds.1592576526.txt.gz ยท Last modified: 2020/06/19 14:22 by thomas.grange
