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qcl:tutorials:thz_qcl_-_fathololoumi_2012
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qcl:tutorials:thz_qcl_-_fathololoumi_2012 [2018/03/20 10:17] thomas.grange |
qcl:tutorials:thz_qcl_-_fathololoumi_2012 [2018/03/20 11:14] (current) thomas.grange [Device definition] |
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| ==== Device definition ==== | ==== Device definition ==== | ||
| - | First, the well (GaAs) and barrier materials (AlGaAs) have to be defined. | + | First, the materials used in the structure (GaAs and AlGaAs) have to be defined. Each material is referred by an alias, which is here 'well' for GaAs and 'barrier' and AlGaAs. |
| <code> | <code> | ||
| - | <Material_Well> | + | <Materials> |
| - | <name> GaAs </name> | + | |
| - | </Material_Well> | + | |
| - | <Material_Barrier> | + | <Material> |
| - | <name> Al(x)Ga(1-x)As </name> | + | <Name>GaAs</Name> |
| - | <Alloy_Composition> 0.15 </Alloy_Composition> <!-- x=0.15 (Al0.15Ga0.85As) --> | + | <Alias>well</Alias> |
| - | </Material_Barrier> | + | <Effective_mass_from_kp_parameters>yes</Effective_mass_from_kp_parameters> |
| + | </Material> | ||
| + | |||
| + | <Material> | ||
| + | <Name>Al(x)Ga(1-x)As</Name> | ||
| + | <Alloy_Composition>0.15</Alloy_Composition> | ||
| + | <Alias>barrier</Alias> | ||
| + | <Effective_mass_from_kp_parameters>yes</Effective_mass_from_kp_parameters> | ||
| + | </Material> | ||
| + | |||
| + | <!-- Model nonparabolicity --> | ||
| + | <NonParabolicity>yes</NonParabolicity> | ||
| + | |||
| + | <UseConductionBandOffset>yes</UseConductionBandOffset> | ||
| + | |||
| + | </Materials> | ||
| </code> | </code> | ||
| + | In addition, it is specified that the effective mass is calculated from the k.p parameters. Also, non | ||
| + | |||
| Then, alternating layers consisting of barrier and well have to be specified, i.e. **4.1** / __16.0__ / **4.3** / 8.9 / **2.46** / 8.15, where AlGaAs is in bold fonts and the doping region is underlined, i.e. the wide GaAs quantum well is doped. | Then, alternating layers consisting of barrier and well have to be specified, i.e. **4.1** / __16.0__ / **4.3** / 8.9 / **2.46** / 8.15, where AlGaAs is in bold fonts and the doping region is underlined, i.e. the wide GaAs quantum well is doped. | ||
qcl/tutorials/thz_qcl_-_fathololoumi_2012.1521541051.txt.gz · Last modified: 2018/03/20 10:17 (external edit)
