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In the following tutorial we demonstrate how can a wurtzite single Quantum well diode be simulated.
The structure is built from the following composition depicted in Figure 1.
The band edges can be simulated upon external bias, which is plotted in Figure 2.
The bias voltage dependence of the structure can be simulated using drift diffusion method, coupled various recombination processes (SRH, Auger, Direct recombination) The emission spectra due direct recombination is plotted in figure 3.
The quantum efficiency is plotted in 4.