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qcl:simulation_of_resonant_tunneling_diodes_rtds
This is an old revision of the document!
The following page (in construction) describes the simulation of devices with open boundary conditions such as RTDs with the nextnano.NEGF software.
<red> Note that in the current version (2020-06-18), only single band calculations are supported for such open boundary conditions. </red>
Simulation of devices with open boundary conditions
In order to simulate a system with open boundary conditions (instead of the default field-periodic boundary condition), contacts have to be defined by adding a <Contacts> section in the input file:
<Contacts> <DensityLeft unit="cm^-3">1e18</DensityLeft> <DensityRight unit="cm^-3">1e18</DensityRight> <MaterialLeft>well</MaterialLeft> <MaterialRight>well</MaterialRight> <Broadening unit="meV">10.0</Broadening> <Ballistic>no</Ballistic> </Contacts>
In this section, the carrier densities in the contact have to been defined using the <DensityLeft> and <DensityRight> commands, as shown above. The unit is cm$^{-3}$.
qcl/simulation_of_resonant_tunneling_diodes_rtds.1592575469.txt.gz · Last modified: 2020/06/19 14:04 by thomas.grange
