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qcl:simulation_of_resonant_tunneling_diodes_rtds [2020/06/19 13:53] thomas.grange |
qcl:simulation_of_resonant_tunneling_diodes_rtds [2022/03/30 17:13] (current) thomas.grange |
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The following page (in construction) describes the simulation of devices with open boundary conditions such as RTDs with the nextnano.NEGF software. | The following page (in construction) describes the simulation of devices with open boundary conditions such as RTDs with the nextnano.NEGF software. | ||
- | ==== Simulation of devices with open boundary conditions ==== | + | <color red> |
+ | Note that in the current version (2022-03-30), only single band calculations are supported for open boundary conditions. A multiband version is currently developed. | ||
+ | </color> | ||
- | In order to simulate a system with open boundary conditions (instead of the default field-periodic boundary condition), contacts have to be defined by adding a <Contacts> section in the input file: | + | ====== Simulation of devices with open boundary conditions ====== |
+ | |||
+ | In order to simulate a system with open boundary conditions (instead of the default field-periodic boundary condition), contacts have to be defined by adding a ''<Contacts>'' section in the input file: | ||
<code> | <code> | ||
<Contacts> | <Contacts> | ||
- | <DensityLeft>1e18</DensityLeft> | + | <DensityLeft unit="cm^-3">1e18</DensityLeft> |
- | <DensityRight>1e18</DensityRight> | + | <DensityRight unit="cm^-3">1e18</DensityRight> |
<MaterialLeft>well</MaterialLeft> | <MaterialLeft>well</MaterialLeft> | ||
Line 14: | Line 18: | ||
<Broadening unit="meV">10.0</Broadening> | <Broadening unit="meV">10.0</Broadening> | ||
- | <Ballistic>no</Ballistic> | + | <Ballistic>no</Ballistic> |
</Contacts> | </Contacts> | ||
</code> | </code> | ||
+ | |||
+ | In this section, the carrier densities in the left and right contact have to been defined using the ''<DensityLeft>'' and ''<DensityRight>'' commands, as shown above. The unit is cm$^{-3}$. | ||
+ | |||
+ | The material of the left and right contacts needs to be defined by te command ''<MaterialLeft>'' and ''<MaterialRight>''. The string value has to be an alias defined in the ''<Materials>'' section of the input file. | ||
+ | |||
+ | A broadening energy can be defined by the command ''<Broadening>''. Indeed, scattering is not accounted in the contact, so that this commands allows a phenomenological broadening of the density of states in the contact. | ||
+ | |||
+ | The command ''<Ballistic>'' can be used to calculate ballistic transport between the contacts (i.e. no scattering process considered) if its value is set to ''yes''. | ||
+ | |||
+ | **The tutorial for AlGaAs/GaAs intraband RTD is available on our new manual from** [[https://www.nextnano.com/manual/nextnano.NEGF_tutorials/algaas_gaas_rtd.html|here]]. | ||
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