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qcl:tutorials [2017/02/16 10:40] stefan.birner |
qcl:tutorials [2022/02/17 13:05] (current) takuma.sato [Intraband RTDs] |
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| - | ====== Tutorials ====== | + | ===== Tutorials ====== |
| + | Here we describe several example input files. | ||
| - | ===== Example input files ====== | + | ==== THz QCLs ==== |
| - | THz QCLs - GaAs/AlGaAs | + | === GaAs/AlGaAs === |
| + | * [[QCL::Tutorials::THz QCL - Fathololoumi (2012)]]\\ Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling\\ S. Fathololoumi, E. Dupont, C.W.I. Chan, Z.R. Wasilewski, S.R. Laframboise, D. Ban, A. Mátyás, C. Jirauschek, Q. Hu, H. C. Liu\\ Optics Express 20, 3866 (2012) | ||
| - | * [[QCL::Tutorials::THz QCL - Fathololoumi]]\\ Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling\\ S. Fathololoumi et al.\\ Optics Express 20, 3866 (2012) | + | * GaAs/Al<sub>0.15</sub>Ga<sub>0.85</sub>As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K\\ R. W. Adams, K. Vijayraghavan, Q. J. Wang, J. Fan, F. Capasso, S. P. Khanna, A. G. Davies, E. H. Linfield, M. A. Belkin\\ Applied Physics Letters 97, 13111 (2010) |
| - | GaAs/Al0.15Ga0.85As terahertz quantum cascade lasers with double-phonon resonant depopulation operating up to 172 K | + | * Influence of doping on the performance of terahertz quantum-cascade lasers\\ A. Benz, G. Fasching, A. M. Andrews, M. Martl, K. Unterrainer, T. Roch, W. Schrenk, S. Golka, G. Strasser\\ Applied Physics Letters 90, 101107 (2007) |
| - | R. W. Adams, K. Vijayraghavan, Q. J. Wang, J. Fan, F. Capasso, S. P. Khanna, A. G. Davies, E. H. Linfield, M. A. Belkin | + | |
| - | Applied Physics Letters 97, 13111 (2010) | + | |
| - | GaAs/AlGaAs THz QCL | + | * 1.9 THz quantum-cascade lasers with one-well injector\\ S. Kumar, B. S. Williams, Q. Hu\\ Applied Physics Letters 88, 121123 (2006) |
| - | Influence of doping on the performance of terahertz quantum-cascade lasers | + | |
| - | A. Benz, G. Fasching, A. M. Andrews, M. Martl, K. Unterrainer, T. Roch, W. Schrenk, S. Golka, G. Strasser | + | |
| - | Applied Physics Letters 90, 101107 (2007) | + | |
| + | * Far-infrared ($\lambda \simeq 87~\mu{\rm m}$) bound-to-continuum quantum-cascade lasers operating up to 90 K\\ G. Scalari, L. Ajili, J. Faist, H. Beere, E. Linfield, D. Ritchie, G. Davies\\ Applied Physics Letters 82, 3165 (2003) | ||
| - | 1.9 THz quantum-cascade lasers with one-well injector | + | * Broadband THz lasing from a photon-phonon quantum cascade structure\\ G. Scalari, M. I. Amanti, C. Walther, R. Terazzi, M. Beck, J. Faist\\ Optics Express 18, 8043 (2010) |
| - | S. Kumar, B. S. Williams, Q. Hu | + | |
| - | Applied Physics Letters 88, 121123 (2006) | + | |
| - | Far-infrared (λ ~ 87 μm)? bound-to-continuum quantum-cascade lasers operating up to 90 K | + | === InGaAs/AlGaSb === |
| - | G. Scalari, L. Ajili, J. Faist, H. Beere, E. Linfield, D. Ritchie, G. Davies | + | |
| - | Applied Physics Letters 82, 3165 (2003) | + | |
| - | Broadband THz lasing from a photon-phonon quantum cascade structure | + | * High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K\\ C. Deutsch, M. Krall, M. Brandstetter, H. Detz, A. M. Andrews, P. Klang, W. Schrenk, G. Strasser, K. Unterrainer\\ Applied Physics Letters 101, 211117 (2012) |
| - | G. Scalari, M. I. Amanti, C. Walther, R. Terazzi, M. Beck, J. Faist | + | |
| - | Optics Express 18, 8043 (2010) | + | |
| - | + | ||
| - | THz QCLs - InGaAs/AlGaSb | + | |
| - | High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142K | + | |
| - | C. Deutsch, M. Krall, M. Brandstetter, H. Detz, A. M. Andrews, P. Klang, W. Schrenk, G. Strasser, K. Unterrainer | + | |
| - | Applied Physics Letters 101, 211117 (2012) | + | |
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| === InGaAs/AlInAs === | === InGaAs/AlInAs === | ||
| - | * [[QCL::Tutorials::Mid-IR QCL - Yu Slivken Razeghi)]] - (InGaAs/InAlAs Mid-IR QCL\\ Injector doping level-dependent continuous-wave operation of InP-based QCLs at $\lambda = 7.3~\mu{\rm m}$ above room temperature\\ J. S. Yu, S. Slivken, M. Razeghi\\ Semiconductor Science and Technology 25, 125015 (2010) | + | * [[QCL::Tutorials::Mid-IR QCL - Yu Slivken Razeghi]]\\ Injector doping level-dependent continuous-wave operation of InP-based QCLs at $\lambda = 7.3~\mu{\rm m}$ above room temperature\\ J. S. Yu, S. Slivken, M. Razeghi\\ Semiconductor Science and Technology 25, 125015 (2010) |
| === GaAs/AlGaAs === | === GaAs/AlGaAs === | ||
| - | * 300 K operation of a GaAs-based quantum-cascade laser at $\lambda$~$9~{\rm mm}$\\ H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori\\ Applied Physics Letters 78, 3529 (2001) | + | * 300 K operation of a GaAs-based quantum-cascade laser at $\lambda\sim 9~{\rm mm}$\\ H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori\\ Applied Physics Letters 78, 3529 (2001) |
| ---- | ---- | ||
| + | ==== Resonant-tunneling diodes ==== | ||
| + | |||
| + | ==== Intraband RTDs ==== | ||
| + | * [[https://www.nextnano.com/manual/nextnano.NEGF_tutorials/algaas_gaas_rtd.html|AlGaAs/GaAs RTD]] (our new manual) | ||
| + | |||
| + | ==== Interband RTDs ==== | ||
| - | ==== Further examples ==== | ||
| - | * **Simple GaAs/InGaAs Quantum Well Example**\\ Self-consistent quantum transport theory of carrier capture in heterostructures\\ T. Kubis, A. Trellakis, P. Vogl\\ Proceedings of the 14<sup>th</sup> International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, vol. 110, pp. 369-372 | ||
qcl/tutorials.1487241638.txt.gz · Last modified: 2017/02/16 10:40 by stefan.birner
