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qcl:tutorials:thz_qcl_-_fathololoumi [2017/02/16 17:52]
stefan.birner
qcl:tutorials:thz_qcl_-_fathololoumi [2017/02/16 19:47] (current)
stefan.birner old revision restored (2017/02/16 18:12)
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-====== Tutorial - THz GaAs/AlGaAs (Fathololoumi) ====== 
- 
-===== Summary ===== 
- 
-This tutorial is based on the following publication. 
- 
-''​[Fathololoumi2012]''​\\ 
-[[http://​dx.doi.org/​10.1364/​OE.20.003866|Terahertz quantum cascade lasers operating up to ~200 K with optimized oscillator strength and improved injection tunneling]]\\ 
-S. Fathololoumi,​ E. Dupont, C.W.I. Chan, Z.R. Wasilewski, S.R. Laframboise,​ D. Ban, A. Mátyás, C. Jirauschek, Q. Hu, H. C. Liu\\ 
-Optics Express 20, 3866 (2012) 
- 
-This article describes an AlGaAs/GaAs THz quantum cascade laser (QCL) operating at around 2.6 to 3.22 THz. 
-The corresonding input file is called\\ 
-''​THz_QCL_GaAs_AlGaAs_Fathololoumi_OptExpress2012_10K-MEDIUM.xml''​. 
- 
-Note that we also provide an input file called\\ 
-''​THz_QCL_GaAs_AlGaAs_Fathololoumi_OptExpress2012_10K-FAST.xml''​ 
-which is faster but does not produce accurate result. 
-This "​**fast**"​ file is only intended to show the user how to run a "​quick"​ simulation. 
-The results shown here correspond to the "​**medium**"​ file. 
- 
-===== Simulation details ===== 
- 
-We simulate the structure at a temperature of 10 K. 
-<​code>​ 
- <​Temperature unit="​K">​ 10 </​Temperature>​ 
-</​code>​ 
- 
- 
-==== Device definition ==== 
- 
-First, the well and barrier materials have to be defined. 
- 
-<​code>​ 
-  <​Material_Well>​ 
-   <​name>​ GaAs </​name> ​                          <​!-- GaAs --> 
-  </​Material_Well>​ 
- 
-  <​Material_Barrier>​ 
-   <​name>​ Al(x)Ga(1-x)As </​name> ​                <​!-- Al(x)Ga(1-x)As --> 
-   <​Alloy_Composition>​ 0.15 </​Alloy_Composition>​ <!-- x, i.e. Al0.15Ga0.85As --> 
-  </​Material_Barrier>​ 
-</​code>​ 
- 
-Then, alternating layers consisting of barrier and well have to be specified. 
- 
-<​code>​ 
-  <​Layer> ​  <​!-- #1 --> 
-   <​Barrier_Thickness unit="​nm">​ 4.1 </​Barrier_Thickness>​ 
-   < ​  ​Well_Thickness unit="​nm">​ 16.0 </   ​Well_Thickness>​ 
-  </​Layer>​ 
- 
-  <​Layer> ​  <​!-- #2 --> 
-   <​Barrier_Thickness unit="​nm">​ 4.3 </​Barrier_Thickness>​ 
-   < ​  ​Well_Thickness unit="​nm">​ 8.9 </   ​Well_Thickness>​ 
-  </​Layer>​ 
- 
-  <​Layer> ​  <​!-- #3 --> 
-   <​Barrier_Thickness unit="​nm">​ 2.46 </​Barrier_Thickness>​ 
-   < ​  ​Well_Thickness unit="​nm">​ 8.15 </   ​Well_Thickness>​ 
-  </​Layer>​ 
-</​code>​ 
- 
-The resulting conduction band edge profile can be found in the file called ''​Band-Edge_vs_position.dat''​. 
-This file includes the band bending due to the electrostatic potential. 
-At a bias voltage of 54 [mV] per period, it looks as follows. 
- 
-== Doping == 
-//(Discuss the doping here.)// 
- 
-== Electric field == 
-//(Discuss the potential drop per period here.)// 
- 
-== Material parameters == 
-//(Discuss chosen masses and band offsets.)// 
- 
-<​code>​ 
- <​Material_Parameters>​ 
-  <​Band_Offset ​          ​ unit="​meV">​ 120 </​Band_Offset>​ 
-  <​Effective_Mass_Well ​  ​ unit="​m0"​ > 0 </​Effective_Mass_Well>​ 
-  <​Effective_Mass_Barrier unit="​m0"​ > 0 </​Effective_Mass_Barrier>​ 
- </​Material_Parameters>​ 
-</​code>​ 
- 
- 
-== Gain == 
- 
-//(Plot and discuss gain results.)// 
  
qcl/tutorials/thz_qcl_-_fathololoumi.1487267535.txt.gz · Last modified: 2017/02/16 17:52 by stefan.birner